IR2117SPBF

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EICEDRIVER™ 600 V HIGH-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SINGLE INPUT

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IR2117SPBF

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INFINEON

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2117 Series

The IR2117SPBF is a single-channel Power MOSFET and IGBT Driver features proprietary HVIC and latch immune CMOS technologies enables ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low-side configuration which operates up to 600V.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2117SPBF

Channel Type	Single
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	250 mA
Driven Configuration	High-Side
Fall Time (Typ)	40 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	9.5 V
Logic Voltage - VIL	6 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	80 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2117 Series

Part	Gate Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Mounting Type	Current - Peak Output (Sink)	Current - Peak Output (Source)	Driven Configuration	High Side Voltage - Max (Bootstrap)	Operating Temperature (Min)	Operating Temperature (Max)	Fall Time (Typ)	Rise Time (Typ)	Package Length	Package Name	Package Width	Input Type	Gate Channel	Logic Voltage - VIH	Logic Voltage - VIL	Number of Drivers	Channel Type
INFINEON IR2117STR	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single
INFINEON IR2117PBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.3 in	8-DIP 8-PDIP	7.62 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single
INFINEON IR2117	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.3 in	8-DIP 8-PDIP	7.62 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single
INFINEON 98-0065	IGBT MOSFET	10 VDC	20 V	Surface Mount	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single
INFINEON IR2117SPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single
INFINEON IR2117PBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.3 in	8-DIP 8-PDIP	7.62 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single
INFINEON IR2117STRPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IR2117SPBF | Datasheet

Application Note EN