IR2117 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HIGH-SIDE 8SOIC

Part	Gate Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Mounting Type	Current - Peak Output (Sink)	Current - Peak Output (Source)	Driven Configuration	High Side Voltage - Max (Bootstrap)	Operating Temperature (Min)	Operating Temperature (Max)	Fall Time (Typ)	Rise Time (Typ)	Package Length	Package Name	Package Width	Input Type	Gate Channel	Logic Voltage - VIH	Logic Voltage - VIL	Number of Drivers	Channel Type
INFINEON IR2117STR	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single
INFINEON IR2117PBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.3 in	8-DIP 8-PDIP	7.62 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single
INFINEON IR2117	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.3 in	8-DIP 8-PDIP	7.62 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single
INFINEON 98-0065	IGBT MOSFET	10 VDC	20 V	Surface Mount	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single
INFINEON IR2117SPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single
INFINEON IR2117PBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.3 in	8-DIP 8-PDIP	7.62 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single
INFINEON IR2117STRPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	500 mA	250 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	N-Channel	9.5 V	6 V	1	Single