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BSB104N08NP3GXUSA1 - 3-WDSON

BSB104N08NP3GXUSA1

Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; DIRECTFET™ M PACKAGE; 10.4 MOHM;

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BSB104N08NP3GXUSA1 - 3-WDSON

BSB104N08NP3GXUSA1

Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; DIRECTFET™ M PACKAGE; 10.4 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSB104N08NP3GXUSA1
Current - Continuous Drain (Id) @ 25°C50 A, 13 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds2100 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case3-WDSON
Power Dissipation (Max)2.8 W, 42 W
Rds On (Max) @ Id, Vgs10.4 mOhm
Supplier Device PackageCanPAK M™, MG-WDSON-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 5000$ 0.62

Description

General part information

BSB104 Series

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Documents

Technical documentation and resources