
BSB104N08NP3GXUSA1
Infineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; DIRECTFET™ M PACKAGE; 10.4 MOHM;
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BSB104N08NP3GXUSA1
Infineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; DIRECTFET™ M PACKAGE; 10.4 MOHM;
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | BSB104N08NP3GXUSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A, 13 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 3-WDSON |
| Power Dissipation (Max) | 2.8 W, 42 W |
| Rds On (Max) @ Id, Vgs | 10.4 mOhm |
| Supplier Device Package | CanPAK M™, MG-WDSON-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 5000 | $ 0.62 | |
Description
General part information
BSB104 Series
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Documents
Technical documentation and resources