Beta
⌘K
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; DIRECTFET™ M PACKAGE; 10.4 MOHM;
| Part | Vgs (Max) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | FET Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Technology | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 2.8 W 42 W | 31 nC | 3.5 V | N-Channel | 13 A 50 A | 80 V | MOSFET (Metal Oxide) | CanPAK M™ MG-WDSON-2 | 150 °C | -40 °C | 10 V | 2100 pF | 10.4 mOhm | Surface Mount | 3-WDSON |