IMZA65R048M1HXKSA1

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Infineon Technologies

COOLSIC™ MOSFET 650V – SIC MOSFET DELIVERING RELIABLE AND COST-EFFECTIVE PERFORMANCE IN TO247 4-PIN PACKAGE

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IMZA65R048M1HXKSA1

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Infineon Technologies

COOLSIC™ MOSFET 650V – SIC MOSFET DELIVERING RELIABLE AND COST-EFFECTIVE PERFORMANCE IN TO247 4-PIN PACKAGE

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Technical Specifications

Parameters and characteristics for this part

Specification	IMZA65R048M1HXKSA1

Current - Continuous Drain (Id) @ 25°C	39 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	33 nC
Input Capacitance (Ciss) (Max) @ Vds	1118 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	64 mOhm
Supplier Device Package	PG-TO247-4-3
Vgs (Max) [Max]	23 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	5.7 V

IMZA65 Series

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	FET Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IMZA65R048M1HXKSA1	650 V	125 W	TO-247-4	N-Channel	23 V	-5 V	PG-TO247-4-3	-55 °C	150 °C	Through Hole	64 mOhm	1118 pF	18 V	5.7 V	39 A	33 nC
Infineon Technologies IMZA65R027M1HXKSA1	650 V	189 W	TO-247-4	N-Channel	23 V	-5 V	PG-TO247-4-3	-55 °C	150 °C	Through Hole	34 mOhm		18 V	5.7 V	59 A		2131 pF	63 nC
Infineon Technologies IMZA65R107M1HXKSA1	650 V	75 W	TO-247-3	N-Channel	23 V	-5 V	PG-TO247-3-41	-55 °C	150 °C	Through Hole	142 mOhm	496 pF	18 V	5.7 V	20 A	15 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.11
		30	$ 5.51
Newark	Each	1	$ 11.64
		10	$ 10.75
		25	$ 8.53
		50	$ 8.07
		100	$ 7.61
		480	$ 7.60

Description

General part information

IMZA65 Series

CoolSiC™ MOSFETtechnology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The IMZA65R048M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both thelowest losses in the applicationand thehighest reliability in operation. Infineon’s SiC MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.

Documents

Technical documentation and resources

No documents available