IMZA65 Series

Catalog

COOLSIC™ MOSFET 650V – SIC MOSFET DELIVERING RELIABLE AND COST-EFFECTIVE PERFORMANCE IN TO247 4-PIN PACKAGE

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	FET Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IMZA65R048M1HXKSA1	650 V	125 W	TO-247-4	N-Channel	23 V	-5 V	PG-TO247-4-3	-55 °C	150 °C	Through Hole	64 mOhm	1118 pF	18 V	5.7 V	39 A	33 nC
Infineon Technologies IMZA65R027M1HXKSA1	650 V	189 W	TO-247-4	N-Channel	23 V	-5 V	PG-TO247-4-3	-55 °C	150 °C	Through Hole	34 mOhm		18 V	5.7 V	59 A		2131 pF	63 nC
Infineon Technologies IMZA65R107M1HXKSA1	650 V	75 W	TO-247-3	N-Channel	23 V	-5 V	PG-TO247-3-41	-55 °C	150 °C	Through Hole	142 mOhm	496 pF	18 V	5.7 V	20 A	15 nC