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10-WFDFN Exp Pkg

LM5102SDX

Obsolete
Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

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10-WFDFN Exp Pkg

LM5102SDX

Obsolete
Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

Find alt

Description

General part information

LM5102 Series

The LM5102 high-voltage gate driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with supply voltages up to 100 V. The outputs are independently controlled. The rising edge of each output can be independently delayed with a programming resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from control logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. This device is available in the standard VSSOP 10 pin and the WSON 10 pin packages.

The LM5102 high-voltage gate driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with supply voltages up to 100 V. The outputs are independently controlled. The rising edge of each output can be independently delayed with a programming resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from control logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. This device is available in the standard VSSOP 10 pin and the WSON 10 pin packages.

Technical Specifications

Parameters and characteristics for this part

SpecificationLM5102SDX
Channel TypeIndependent
Current - Peak Output (Sink)1.6 A
Current - Peak Output (Source)1.6 A
Driven ConfigurationHalf-Bridge
Fall Time (Typ)600 ns
Gate ChannelN-Channel
Gate TypeN-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)118 V
Input TypeNon-Inverting
Logic Voltage - VIH2.2 V
Logic Voltage - VIL0.8 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package / Case10-WDFN Exposed Pad
Package Length4 mm
Package Name10-WSON
Package Width4 mm
Rise Time (Typ)600 ns
Voltage - Supply (Maximum)14 V
Voltage - Supply (Minimum)9 VDC

Pricing

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CAD

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