
LM5102SDX
ObsoleteIC GATE DRVR HALF-BRIDGE 10WSON

LM5102SDX
ObsoleteIC GATE DRVR HALF-BRIDGE 10WSON
Description
General part information
LM5102 Series
The LM5102 high-voltage gate driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with supply voltages up to 100 V. The outputs are independently controlled. The rising edge of each output can be independently delayed with a programming resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from control logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. This device is available in the standard VSSOP 10 pin and the WSON 10 pin packages.
The LM5102 high-voltage gate driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with supply voltages up to 100 V. The outputs are independently controlled. The rising edge of each output can be independently delayed with a programming resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from control logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. This device is available in the standard VSSOP 10 pin and the WSON 10 pin packages.
Technical Specifications
Parameters and characteristics for this part
| Specification | LM5102SDX |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 1.6 A |
| Current - Peak Output (Source) | 1.6 A |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 600 ns |
| Gate Channel | N-Channel |
| Gate Type | N-Channel MOSFET, MOSFET |
| High Side Voltage - Max (Bootstrap) | 118 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIH | 2.2 V |
| Logic Voltage - VIL | 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 10-WDFN Exposed Pad |
| Package Length | 4 mm |
| Package Name | 10-WSON |
| Package Width | 4 mm |
| Rise Time (Typ) | 600 ns |
| Voltage - Supply (Maximum) | 14 V |
| Voltage - Supply (Minimum) | 9 VDC |
Pricing
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