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IPI100N08N3GHKSA1

IPI100N08N3GHKSA1

Obsolete
INFINEON

MOSFET N-CH 80V 70A TO262-3

IPI100N08N3GHKSA1

IPI100N08N3GHKSA1

Obsolete
INFINEON

MOSFET N-CH 80V 70A TO262-3

Description

General part information

IPI100N Series

N-Channel 80 V 70A (Tc) 100W (Tc) Through Hole PG-TO262-3

Technical Specifications

Parameters and characteristics for this part

SpecificationIPI100N08N3GHKSA1
Current - Continuous Drain (Id) (Tc)70 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)35 nC
Input Capacitance (Ciss) (Max)2410 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NamePG-TO262-3
Power Dissipation (Max)100 W
Rds On (Max)10 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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Documents

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