IPI100N Series
Manufacturer: INFINEON
MOSFET N-CH 40V 100A TO262-3
| Part | Current - Continuous Drain (Id) (Tc) | Rds On (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Max) | Vgs(th) (Max) | Qualification | Input Capacitance (Ciss) (Max) | FET Type | Package Name | Vgs (Max) | Drain to Source Voltage (Vdss) | Grade | Technology | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 100 A | 2.7 mOhm | 10 V | 90 nC | 4 V | AEC-Q101 | 7180 pF | N-Channel | PG-TO262-3 | 20 V | 40 V | Automotive | MOSFET (Metal Oxide) | Through Hole | -55 °C | 175 °C | I2PAK TO-262-3 Long Leads TO-262AA | 115 W | ||
INFINEON | 100 A | 5.1 mOhm | 10 V | 185 nC | 4 V | AEC-Q101 | 11570 pF | N-Channel | PG-TO262-3-1 | 20 V | 120 V | Automotive | MOSFET (Metal Oxide) | Through Hole | -55 °C | 175 °C | I2PAK TO-262-3 Long Leads TO-262AA | 300 W | ||
INFINEON | 100 A | 3.8 mOhm | 362 nC | 2.2 V | AEC-Q101 | 17270 pF | N-Channel | PG-TO262-3 | 16 V | 55 V | Automotive | MOSFET (Metal Oxide) | Through Hole | -55 °C | 175 °C | I2PAK TO-262-3 Long Leads TO-262AA | 214 W | 10 V | 5 V | |
INFINEON | 100 A | 5.1 mOhm | 10 V | 176 nC | 4 V | AEC-Q101 | 11570 pF | N-Channel | PG-TO262-3 | 20 V | 100 V | Automotive | MOSFET (Metal Oxide) | Through Hole | -55 °C | 175 °C | I2PAK TO-262-3 Long Leads TO-262AA | 300 W | ||
INFINEON | 70 A | 10 mOhm | 35 nC | 3.5 V | 2410 pF | N-Channel | PG-TO262-3 | 20 V | 80 V | MOSFET (Metal Oxide) | Through Hole | -55 °C | 175 °C | I2PAK TO-262-3 Long Leads TO-262AA | 100 W | 10 V | 6 V | |||
INFINEON | 100 A | 3 mOhm | 550 nC | 2.2 V | AEC-Q101 | 26240 pF | N-Channel | PG-TO262-3 | 16 V | 55 V | Automotive | MOSFET (Metal Oxide) | Through Hole | -55 °C | 175 °C | I2PAK TO-262-3 Long Leads TO-262AA | 300 W | 10 V | 5 V |