IPI100N Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 40V 100A TO262-3

Part	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Vgs(th) (Max)	Qualification	Input Capacitance (Ciss) (Max)	FET Type	Package Name	Vgs (Max)	Drain to Source Voltage (Vdss)	Grade	Technology	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
INFINEON IPI100N04S4H2AKSA1	100 A	2.7 mOhm	10 V	90 nC	4 V	AEC-Q101	7180 pF	N-Channel	PG-TO262-3	20 V	40 V	Automotive	MOSFET (Metal Oxide)	Through Hole	-55 °C	175 °C	I2PAK TO-262-3 Long Leads TO-262AA	115 W
INFINEON IPI100N12S305AKSA1	100 A	5.1 mOhm	10 V	185 nC	4 V	AEC-Q101	11570 pF	N-Channel	PG-TO262-3-1	20 V	120 V	Automotive	MOSFET (Metal Oxide)	Through Hole	-55 °C	175 °C	I2PAK TO-262-3 Long Leads TO-262AA	300 W
INFINEON IPI100N06S3L04XK	100 A	3.8 mOhm		362 nC	2.2 V	AEC-Q101	17270 pF	N-Channel	PG-TO262-3	16 V	55 V	Automotive	MOSFET (Metal Oxide)	Through Hole	-55 °C	175 °C	I2PAK TO-262-3 Long Leads TO-262AA	214 W	10 V	5 V
INFINEON IPI100N10S305AKSA1	100 A	5.1 mOhm	10 V	176 nC	4 V	AEC-Q101	11570 pF	N-Channel	PG-TO262-3	20 V	100 V	Automotive	MOSFET (Metal Oxide)	Through Hole	-55 °C	175 °C	I2PAK TO-262-3 Long Leads TO-262AA	300 W
INFINEON IPI100N08N3GHKSA1	70 A	10 mOhm		35 nC	3.5 V		2410 pF	N-Channel	PG-TO262-3	20 V	80 V		MOSFET (Metal Oxide)	Through Hole	-55 °C	175 °C	I2PAK TO-262-3 Long Leads TO-262AA	100 W	10 V	6 V
INFINEON IPI100N06S3L-03	100 A	3 mOhm		550 nC	2.2 V	AEC-Q101	26240 pF	N-Channel	PG-TO262-3	16 V	55 V	Automotive	MOSFET (Metal Oxide)	Through Hole	-55 °C	175 °C	I2PAK TO-262-3 Long Leads TO-262AA	300 W	10 V	5 V