Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
General part information
N-Channel 30 V 50A (Tc) 2.7W (Ta), 59.5W (Tc) Through Hole TO-220AB
Technical documentation and resources
Parameters and characteristics commom to parts in this series
| Specification | SUP50N03-5M1P-GE3 | SUP50 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A | 50 A |
| Drain to Source Voltage (Vdss) | 30 V | 30 - 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 4.5 - 10 V |
| FET Type | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC | 66 nC |
| Gate Charge (Qg) (Max) @ Vgs | - | 68 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF | 2055 - 2780 pF |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-220-3 | TO-220-3 |
| Power Dissipation (Max) | 59.5 W, 2.7 W | 2.7 - 125 W |
| Rds On (Max) @ Id, Vgs | 5.1 mOhm | 5.1 - 21 mOhm |
| Supplier Device Package | TO-220AB | TO-220AB |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V | 2.5 - 4 V |
MOSFET N-CH 30V 50A TO220AB
| Part | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUP50N03-5M1P-GE3 | MOSFET (Metal Oxide) | 2.5 V | 50 A | 30 V | TO-220AB | 2780 pF | N-Channel | Through Hole | -55 °C | 150 °C | TO-220-3 | 5.1 mOhm | 66 nC | 2.7 W, 59.5 W | 4.5 V, 10 V | 20 V | |
Vishay Siliconix SUP50N10-21P-GE3 | MOSFET (Metal Oxide) | 4 V | 50 A | 100 V | TO-220AB | 2055 pF | N-Channel | Through Hole | -55 °C | 150 °C | TO-220-3 | 21 mOhm | 3.1 W, 125 W | 6 V, 10 V | 20 V | 68 nC |
