MOSFET N-CH 30V 50A TO220AB
| Part | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUP50N03-5M1P-GE3 | MOSFET (Metal Oxide) | 2.5 V | 50 A | 30 V | TO-220AB | 2780 pF | N-Channel | Through Hole | -55 °C | 150 °C | TO-220-3 | 5.1 mOhm | 66 nC | 2.7 W, 59.5 W | 4.5 V, 10 V | 20 V | |
Vishay Siliconix SUP50N10-21P-GE3 | MOSFET (Metal Oxide) | 4 V | 50 A | 100 V | TO-220AB | 2055 pF | N-Channel | Through Hole | -55 °C | 150 °C | TO-220-3 | 21 mOhm | 3.1 W, 125 W | 6 V, 10 V | 20 V | 68 nC |