IRF7342PBF

Unknown

INFINEON

IR MOSFET™ P+P DUAL POWER MOSFET ; SO-8 PACKAGE; 105 MOHM;

IRF7342PBF

Unknown

INFINEON

IR MOSFET™ P+P DUAL POWER MOSFET ; SO-8 PACKAGE; 105 MOHM;

Description Specifications Series Pricing CAD Documents

Description

General part information

IRF734 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7342PBF

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	3.4 A
Drain to Source Voltage (Vdss)	55 V
FET Feature	Logic Level Gate
Gate Charge (Max)	38 nC, 38 nC
Input Capacitance (Ciss) (Max)	690 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SO, 8-SOIC
Package Width	3.9 mm
Power - Max	2 VA
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

IRF734 Series

Part	Package Name	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Power - Max	Channel Count	Configuration	Configuration - Features	Package Length	Package Width	Rds On (Max)	Current - Continuous Drain (Id)	Technology	FET Feature	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)
INFINEON IRF7341PBF	8-SO 8-SOIC	1 V	-55 °C	150 °C	Surface Mount	740 pF	36 nC	55 V	2 VA	2	N-Channel	Dual	0.154 in	3.9 mm	50 mOhm	4.7 A	MOSFET (Metal Oxide)	Logic Level Gate
INFINEON IRF7343QTRPBF	8-SO 8-SOIC	1 V			Surface Mount	740 pF	36 nC	55 V	2 VA		N P-Channel		0.154 in	3.9 mm	50 mOhm		MOSFET (Metal Oxide)		4.7 A	3.4 A
INFINEON IRF7342PBF	8-SO 8-SOIC	1 V	-55 °C	150 °C	Surface Mount	690 pF	38 nC 38 nC	55 V	2 VA	2	P-Channel	Dual	0.154 in	3.9 mm		3.4 A	MOSFET (Metal Oxide)	Logic Level Gate
INFINEON IRF7342TRPBF	8-SO 8-SOIC	1 V	-55 °C	150 °C	Surface Mount	690 pF	38 nC 38 nC	55 V	2 VA	2	P-Channel	Dual	0.154 in	3.9 mm		3.4 A	MOSFET (Metal Oxide)	Logic Level Gate
INFINEON IRF7342QTRPBF	8-SO 8-SOIC	1 V			Surface Mount	690 pF	38 nC 38 nC	55 V	2 VA	2	P-Channel	Dual	0.154 in	3.9 mm		3.4 A	MOSFET (Metal Oxide)	Logic Level Gate
INFINEON IRF7343TRPBF	8-SO 8-SOIC	1 V	-55 °C	150 °C	Surface Mount	740 pF	36 nC	55 V	2 VA		N P-Channel		0.154 in	3.9 mm	50 mOhm		MOSFET (Metal Oxide)		4.7 A	3.4 A
INFINEON IRF7341TRPBF	8-SO 8-SOIC	1 V	-55 °C	150 °C	Surface Mount	740 pF	36 nC	55 V	2 VA	2	N-Channel	Dual	0.154 in	3.9 mm	50 mOhm	4.7 A	MOSFET (Metal Oxide)	Logic Level Gate
INFINEON IRF7341GTRPBF	8-SO 8-SOIC	1 V	-55 °C	175 °C	Surface Mount	780 pF	44 nC	55 V	2.4 W	2	N-Channel	Dual	0.154 in	3.9 mm	50 mOhm	5.1 A	MOSFET (Metal Oxide)
INFINEON IRF7343PBF	8-SO 8-SOIC	1 V	-55 °C	150 °C	Surface Mount	740 pF	36 nC	55 V	2 VA		N P-Channel		0.154 in	3.9 mm	50 mOhm		MOSFET (Metal Oxide)		4.7 A	3.4 A

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IR Part Numbering System

IRF7342PBF | Datasheet