IRF7343PBF

Obsolete

INFINEON

MOSFET N/P-CH 55V 4.7A/3.4A 8SO

IRF7343PBF

Obsolete

INFINEON

MOSFET N/P-CH 55V 4.7A/3.4A 8SO

Description Specifications Series Pricing CAD Documents

Description

General part information

IRF734 Series

Mosfet Array 55V 4.7A, 3.4A 2W Surface Mount 8-SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7343PBF

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	3.4 A
Current - Continuous Drain (Id) (Typical)	4.7 A
Drain to Source Voltage (Vdss)	55 V
Gate Charge (Max)	36 nC
Input Capacitance (Ciss) (Max)	740 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SO, 8-SOIC
Package Width	3.9 mm
Power - Max	2 VA
Rds On (Max)	50 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

IRF734 Series

Part	Package Name	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Power - Max	Channel Count	Configuration	Configuration - Features	Package Length	Package Width	Rds On (Max)	Current - Continuous Drain (Id)	Technology	FET Feature	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)
INFINEON IRF7341PBF	8-SO 8-SOIC	1 V	-55 °C	150 °C	Surface Mount	740 pF	36 nC	55 V	2 VA	2	N-Channel	Dual	0.154 in	3.9 mm	50 mOhm	4.7 A	MOSFET (Metal Oxide)	Logic Level Gate
INFINEON IRF7343QTRPBF	8-SO 8-SOIC	1 V			Surface Mount	740 pF	36 nC	55 V	2 VA		N P-Channel		0.154 in	3.9 mm	50 mOhm		MOSFET (Metal Oxide)		4.7 A	3.4 A
INFINEON IRF7342PBF	8-SO 8-SOIC	1 V	-55 °C	150 °C	Surface Mount	690 pF	38 nC 38 nC	55 V	2 VA	2	P-Channel	Dual	0.154 in	3.9 mm		3.4 A	MOSFET (Metal Oxide)	Logic Level Gate
INFINEON IRF7342TRPBF	8-SO 8-SOIC	1 V	-55 °C	150 °C	Surface Mount	690 pF	38 nC 38 nC	55 V	2 VA	2	P-Channel	Dual	0.154 in	3.9 mm		3.4 A	MOSFET (Metal Oxide)	Logic Level Gate
INFINEON IRF7342QTRPBF	8-SO 8-SOIC	1 V			Surface Mount	690 pF	38 nC 38 nC	55 V	2 VA	2	P-Channel	Dual	0.154 in	3.9 mm		3.4 A	MOSFET (Metal Oxide)	Logic Level Gate
INFINEON IRF7343TRPBF	8-SO 8-SOIC	1 V	-55 °C	150 °C	Surface Mount	740 pF	36 nC	55 V	2 VA		N P-Channel		0.154 in	3.9 mm	50 mOhm		MOSFET (Metal Oxide)		4.7 A	3.4 A
INFINEON IRF7341TRPBF	8-SO 8-SOIC	1 V	-55 °C	150 °C	Surface Mount	740 pF	36 nC	55 V	2 VA	2	N-Channel	Dual	0.154 in	3.9 mm	50 mOhm	4.7 A	MOSFET (Metal Oxide)	Logic Level Gate
INFINEON IRF7341GTRPBF	8-SO 8-SOIC	1 V	-55 °C	175 °C	Surface Mount	780 pF	44 nC	55 V	2.4 W	2	N-Channel	Dual	0.154 in	3.9 mm	50 mOhm	5.1 A	MOSFET (Metal Oxide)
INFINEON IRF7343PBF	8-SO 8-SOIC	1 V	-55 °C	150 °C	Surface Mount	740 pF	36 nC	55 V	2 VA		N P-Channel		0.154 in	3.9 mm	50 mOhm		MOSFET (Metal Oxide)		4.7 A	3.4 A

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IR Part Numbering System

IRF7343PBF | Datasheet