IRS21281PBF

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Infineon Technologies

BUFFER/INVERTER BASED MOSFET DRI

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Infineon Technologies

BUFFER/INVERTER BASED MOSFET DRI

Technical Specifications

Parameters and characteristics for this part

Specification	IRS21281PBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	9 V

Part	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Supplier Device Package	Input Type	Package / Case	Package / Case	Package / Case	Channel Type	Number of Drivers
Infineon Technologies IRS21281PBF	High-Side	600 V	Through Hole	9 V	20 V	150 °C	-40 °C	IGBT N-Channel MOSFET	80 ns	40 ns	0.8 V 2.5 V	290 mA	600 mA	8-PDIP	Inverting	0.3 in	8-DIP	7.62 mm	Single	1

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	193	$ 1.56

General part information

High-Side Gate Driver IC Inverting 8-PDIP

Technical documentation and resources

No documents available