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BUFFER/INVERTER BASED MOSFET DRI
| Part | Driven Configuration | High Side Voltage - Max (Bootstrap) [Max] | Mounting Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Gate Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Supplier Device Package | Input Type | Package / Case | Package / Case | Package / Case | Channel Type | Number of Drivers |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | High-Side | 600 V | Through Hole | 9 V | 20 V | 150 °C | -40 °C | IGBT N-Channel MOSFET | 80 ns | 40 ns | 0.8 V 2.5 V | 290 mA | 600 mA | 8-PDIP | Inverting | 0.3 in | 8-DIP | 7.62 mm | Single | 1 |