Specification	CSD19505KCS

Current - Continuous Drain (Id) (Ta)	150 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	76 nC, 76 nC
Input Capacitance (Ciss) (Max)	7820 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220-3
Power Dissipation (Max)	300 W
Rds On (Max)	3.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.2 V

CSD19505KCS Series

80-V, N channel NexFET™ power MOSFET, single TO-220, 3.1 mOhm

Part	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Mounting Type	Rds On (Max)	Package Name	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)
Texas Instruments CSD19505KCS	20 V	TO-220-3	7820 pF	76 nC 76 nC	-55 °C	175 °C	MOSFET (Metal Oxide)	80 V	300 W	N-Channel	Through Hole	3.8 mOhm	TO-220-3	6 V	10 V	3.2 V	150 A

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