Specification	C3M0120100K

Current - Continuous Drain (Id) (Tc)	22 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	21.5 nC
Input Capacitance (Ciss) (Max)	350 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-4
Package Name	TO-247-4L
Power Dissipation (Max)	83 W
Rds On (Max)	155 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	15 V
Vgs(th) (Max)	3.5 V

C3M0120100 Series

Part	Vgs(th) (Max)	Power Dissipation (Max)	Vgs (Max)	Package / Case	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Technology	Package Name	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package Leads	Vgs (Max) Negative	Vgs (Max) Positive
Wolfspeed, Inc. C3M0120100K	3.5 V	83 W	15 V	TO-247-4	21.5 nC	15 V	22 A	SiCFET (Silicon Carbide)	TO-247-4L	Through Hole	1000 V	-55 °C	150 °C	N-Channel	350 pF	155 mOhm
Wolfspeed, Inc. C3M0120100J	3.5 V	83 W			21.5 nC	15 V	22 A	SiCFET (Silicon Carbide)	D2PAK D2PAK-7	Surface Mount	1000 V	-55 °C	150 °C	N-Channel	350 pF	155 mOhm	7 Leads	-4 V	15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources