SPW52N50C3FKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 560V 52A TO247-3

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Obsolete

Infineon Technologies

MOSFET N-CH 560V 52A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPW52N50C3FKSA1

Current - Continuous Drain (Id) @ 25°C	52 A
Drain to Source Voltage (Vdss)	560 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	290 nC
Input Capacitance (Ciss) (Max) @ Vds	6800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	417 W
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies SPW52N50C3FKSA1	560 V	N-Channel	PG-TO247-3-1	20 V	MOSFET (Metal Oxide)	290 nC	-55 °C	150 °C	Through Hole	417 W	10 V	6800 pF	TO-247-3	3.9 V	52 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 560 V 52A (Tc) 417W (Tc) Through Hole PG-TO247-3-1

Technical documentation and resources