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MOSFET N-CH 560V 52A TO247-3
| Part | Drain to Source Voltage (Vdss) | FET Type | Supplier Device Package | Vgs (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 560 V | N-Channel | PG-TO247-3-1 | 20 V | MOSFET (Metal Oxide) | 290 nC | -55 °C | 150 °C | Through Hole | 417 W | 10 V | 6800 pF | TO-247-3 | 3.9 V | 52 A |