IPP65R090CFD7XKSA1

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INFINEON

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 90 MOHM;

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IPP65R090CFD7XKSA1

NRND

INFINEON

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 90 MOHM;

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Description Specifications Series Pricing CAD Documents

Description

General part information

IPP65R Series

Infineon’s650V CoolMOS™ CFD7 superjunction MOSFETIPP65R090CFD7 in a TO-220 package is ideally suited for resonant topologies in industrial applications, such asserver,telecom,solar, andEV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to theCFD2 SJ MOSFETfamily, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Technical Specifications

Parameters and characteristics for this part

Specification	IPP65R090CFD7XKSA1

Current - Continuous Drain (Id) (Tc)	25 A, 25 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	53 nC
Input Capacitance (Ciss) (Max)	2513 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	PG-TO220-3
Power Dissipation (Max)	127 W
Rds On (Max)	90 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IPP65R Series

Part	Mounting Type	Rds On (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Max)	FET Type	Technology	Grade	Qualification
INFINEON IPP65R074C6XKSA1	Through Hole	74 mOhm	3.5 V	480.8 W	PG-TO220-3	57.7 A	20 V	3020 pF	-55 °C	150 °C	10 V	TO-220-3	650 V	17 nC	N-Channel	MOSFET (Metal Oxide)
INFINEON IPP65R600E6XKSA1	Through Hole	600 mOhm	3.5 V	63 W	PG-TO220-3	7.3 A	20 V	440 pF	-55 °C	150 °C	10 V	TO-220-3	650 V	23 nC	N-Channel	MOSFET (Metal Oxide)
INFINEON IPP65R090CFD7XKSA1	Through Hole	90 mOhm	4.5 V	127 W	PG-TO220-3	25 A 25 A	20 V	2513 pF	-55 °C	150 °C	10 V	TO-220-3	650 V	53 nC	N-Channel	MOSFET (Metal Oxide)
INFINEON IPP65R380C6XKSA1	Through Hole	380 mOhm	3.5 V	83 W	PG-TO220-3	10.6 A	20 V	710 pF	-55 °C	150 °C	10 V	TO-220-3	650 V	39 nC	N-Channel	MOSFET (Metal Oxide)
INFINEON IPP65R380E6XKSA1	Through Hole	380 mOhm	3.5 V	83 W	PG-TO220-3	10.6 A	20 V	710 pF	-55 °C	150 °C	10 V	TO-220-3	650 V	39 nC	N-Channel	MOSFET (Metal Oxide)
INFINEON IPP65R190CFDAAKSA1	Through Hole	190 mOhm	4.5 V	151 W	PG-TO220-3	17.5 A	20 V	1850 pF	-40 °C	150 °C	10 V	TO-220-3	650 V	68 nC	N-Channel	MOSFET (Metal Oxide)	Automotive	AEC-Q101
INFINEON IPP65R660CFDAAKSA1	Through Hole	660 mOhm	4.5 V	62.5 W	PG-TO220-3	6 A	20 V	543 pF	-40 °C	150 °C	10 V	TO-220-3	650 V	20 nC	N-Channel	MOSFET (Metal Oxide)	Automotive	AEC-Q101
INFINEON IPP65R280E6XKSA1	Through Hole	280 mOhm	3.5 V	104 W	PG-TO220-3	13.8 A	20 V	950 pF	-55 °C	150 °C	10 V	TO-220-3	650 V	45 nC	N-Channel	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Technical Data Sheet EN

IPP65R090CFD7XKSA1 | Datasheet