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IPP65R660CFDAAKSA1

IPP65R660CFDAAKSA1

Obsolete
INFINEON

MOSFET N-CH 650V 6A TO220-3

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IPP65R660CFDAAKSA1

IPP65R660CFDAAKSA1

Obsolete
INFINEON

MOSFET N-CH 650V 6A TO220-3

Find alt

Description

General part information

IPP65R Series

N-Channel 650 V 6A (Tc) 62.5W (Tc) Through Hole PG-TO220-3

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP65R660CFDAAKSA1
Current - Continuous Drain (Id) (Tc)6 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)20 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)543 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseTO-220-3
Package NamePG-TO220-3
Power Dissipation (Max)62.5 W
QualificationAEC-Q101
Rds On (Max)660 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

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Documents

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