FZT758TA

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 0.5A I(C), 400V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 0.5A I(C), 400V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	FZT758TA

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	50 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	500 mV
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Supplier Device Package
Diodes Inc FZT758TA	-55 °C	150 °C	TO-261-4 TO-261AA	40	100 nA	PNP	2 W	400 V	Surface Mount	50 MHz	500 mA	500 mV	SOT-223-3
Diodes Inc FZT758TC	-55 °C	150 °C	TO-261-4 TO-261AA	40	100 nA	PNP	2 W	400 V	Surface Mount	50 MHz	500 mA	500 mV	SOT-223-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 400 V 500 mA 50MHz 2 W Surface Mount SOT-223-3

Technical documentation and resources