POWER BIPOLAR TRANSISTOR, 0.5A I(C), 400V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector Cutoff (Max) [Max] | Transistor Type | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) | Mounting Type | Frequency - Transition | Current - Collector (Ic) (Max) [Max] | Vce Saturation (Max) @ Ib, Ic [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | -55 °C | 150 °C | TO-261-4 TO-261AA | 40 | 100 nA | PNP | 2 W | 400 V | Surface Mount | 50 MHz | 500 mA | 500 mV | SOT-223-3 |
Diodes Inc | -55 °C | 150 °C | TO-261-4 TO-261AA | 40 | 100 nA | PNP | 2 W | 400 V | Surface Mount | 50 MHz | 500 mA | 500 mV | SOT-223-3 |