APT11GF120BRDQ1G

Obsolete

Microsemi Corporation

IGBT 1200V 25A 156W TO247

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Obsolete

Microsemi Corporation

IGBT 1200V 25A 156W TO247

Technical Specifications

Parameters and characteristics for this part

Specification	APT11GF120BRDQ1G

Current - Collector (Ic) (Max) [Max]	25 A
Gate Charge	65 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	156 W
Supplier Device Package	TO-247 [B]
Switching Energy	285 µJ, 300 µJ
Td (on/off) @ 25°C	7 ns, 100 ns
Test Condition	8 A, 10 Ohm, 800 V, 15 V
Vce(on) (Max) @ Vge, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Power - Max [Max]	Current - Collector Pulsed (Icm)	Package / Case	Vce(on) (Max) @ Vge, Ic	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Mounting Type	Switching Energy	IGBT Type	Supplier Device Package	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]
Microsemi Corporation APT11GF120KRG	156 W	44 A	TO-220-3	3 V	65 nC	-55 °C	150 °C	25 A	7 ns 100 ns	Through Hole	285 µJ 300 µJ	NPT	TO-220 [K]	8 A 10 Ohm 15 V 800 V	1200 V
Microsemi Corporation APT11GF120BRDQ1G	156 W		TO-247-3	3 V	65 nC	-55 °C	150 °C	25 A	7 ns 100 ns	Through Hole	285 µJ 300 µJ	NPT	TO-247 [B]	8 A 10 Ohm 15 V 800 V	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 1200 V 25 A 156 W Through Hole TO-247 [B]

Technical documentation and resources