APT11GF120KRG

Obsolete

Microsemi Corporation

IGBT 1200V 25A 156W TO220

Search across all available documentation for this part.

Obsolete

Microsemi Corporation

IGBT 1200V 25A 156W TO220

Technical Specifications

Parameters and characteristics for this part

Specification	APT11GF120KRG

Current - Collector (Ic) (Max) [Max]	25 A
Current - Collector Pulsed (Icm)	44 A
Gate Charge	65 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	156 W
Supplier Device Package	TO-220 [K]
Switching Energy	285 µJ, 300 µJ
Td (on/off) @ 25°C	7 ns, 100 ns
Test Condition	8 A, 10 Ohm, 800 V, 15 V
Vce(on) (Max) @ Vge, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Power - Max [Max]	Current - Collector Pulsed (Icm)	Package / Case	Vce(on) (Max) @ Vge, Ic	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Mounting Type	Switching Energy	IGBT Type	Supplier Device Package	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]
Microsemi Corporation APT11GF120KRG	156 W	44 A	TO-220-3	3 V	65 nC	-55 °C	150 °C	25 A	7 ns 100 ns	Through Hole	285 µJ 300 µJ	NPT	TO-220 [K]	8 A 10 Ohm 15 V 800 V	1200 V
Microsemi Corporation APT11GF120BRDQ1G	156 W		TO-247-3	3 V	65 nC	-55 °C	150 °C	25 A	7 ns 100 ns	Through Hole	285 µJ 300 µJ	NPT	TO-247 [B]	8 A 10 Ohm 15 V 800 V	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 1200 V 25 A 156 W Through Hole TO-220 [K]

Technical documentation and resources