PMPB215ENEAX

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Nexperia USA Inc.

80 V, SINGLE N-CHANNEL TRENCH MOSFET

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PMPB215ENEAX

Active

Nexperia USA Inc.

80 V, SINGLE N-CHANNEL TRENCH MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMPB215ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB215ENEAX

Current - Continuous Drain (Id) (Ta)	1.9 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	7.2 nC, 7.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	215 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	1.6 W, 15.6 W
Qualification	AEC-Q101
Rds On (Max)	230 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.7 V

PMPB215ENEA Series

80 V, single N-channel Trench MOSFET

Part	Grade	Current - Continuous Drain (Id) (Ta)	Package Name	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Technology	Qualification	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Vgs(th) (Max)	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Nexperia USA Inc. PMPB215ENEAX	Automotive	1.9 A	DFN2020MD-6	230 mOhm	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	AEC-Q101	7.2 nC 7.2 nC	215 pF	20 V	10 V	4.5 V	6-UDFN Exposed Pad	2.7 V	Surface Mount	1.6 W 15.6 W	80 V