80 V, single N-channel Trench MOSFET
80 V, single N-channel Trench MOSFET
| Part | Grade | Current - Continuous Drain (Id) (Ta) | Package Name | Rds On (Max) | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Technology | Qualification | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Vgs (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package / Case | Vgs(th) (Max) | Mounting Type | Power Dissipation (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Automotive | 1.9 A | DFN2020MD-6 | 230 mOhm | -55 °C | 150 °C | N-Channel | MOSFET (Metal Oxide) | AEC-Q101 | 7.2 nC 7.2 nC | 215 pF | 20 V | 10 V | 4.5 V | 6-UDFN Exposed Pad | 2.7 V | Surface Mount | 1.6 W 15.6 W | 80 V |