DMP3004SSS-13

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Diodes Inc

MOSFET BVDSS: 25V~30V SO-8 T&R 2.5K

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Diodes Inc

MOSFET BVDSS: 25V~30V SO-8 T&R 2.5K

Technical Specifications

Parameters and characteristics for this part

Specification	DMP3004SSS-13

Current - Continuous Drain (Id) @ 25°C	16.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	156 nC
Input Capacitance (Ciss) (Max) @ Vds	7693 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.2 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

P-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
Diodes Inc DMP3004SSS-13	8-SO	Surface Mount	P-Channel	4 mOhm	MOSFET (Metal Oxide)	20 V	7693 pF	4.5 V 10 V	8-SOIC	3.9 mm	0.154 in	1.2 W	30 V	156 nC	-55 °C	150 °C	16.2 A	2.5 V

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General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources