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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Supplier Device Package | Mounting Type | FET Type | Rds On (Max) @ Id, Vgs | Technology | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Package / Case [y] | Package / Case [x] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 8-SO | Surface Mount | P-Channel | 4 mOhm | MOSFET (Metal Oxide) | 20 V | 7693 pF | 4.5 V 10 V | 8-SOIC | 3.9 mm | 0.154 in | 1.2 W | 30 V | 156 nC | -55 °C | 150 °C | 16.2 A | 2.5 V |