APT95GR65JDU60

Obsolete

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

Search across all available documentation for this part.

Obsolete

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

Technical Specifications

Parameters and characteristics for this part

Specification	APT95GR65JDU60

Current - Collector Pulsed (Icm)	380 A
Gate Charge	420 nC
IGBT Type	NPT
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power - Max [Max]	446 W
Supplier Device Package	SOT-227
Td (on/off) @ 25°C	226 ns, 29 ns
Test Condition	4.3 Ohm, 95 A, 433 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Supplier Device Package	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Gate Charge	Mounting Type	Vce(on) (Max) @ Vge, Ic	IGBT Type	Test Condition	Package / Case
Microsemi Corporation APT95GR65JDU60	650 V	-55 °C	150 °C	446 W	SOT-227	29 ns 226 ns	380 A	420 nC	Chassis Mount	2.4 V	NPT	4.3 Ohm 15 V 95 A 433 V	SOT-227-4 miniBLOC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 650 V 135 A 446 W Chassis Mount SOT-227

Technical documentation and resources

No documents available