INSULATED GATE BIPOLAR TRANSISTO
| Part | Voltage - Collector Emitter Breakdown (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Power - Max [Max] | Supplier Device Package | Td (on/off) @ 25°C | Current - Collector Pulsed (Icm) | Gate Charge | Mounting Type | Vce(on) (Max) @ Vge, Ic | IGBT Type | Test Condition | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | 650 V | -55 °C | 150 °C | 446 W | SOT-227 | 29 ns 226 ns | 380 A | 420 nC | Chassis Mount | 2.4 V | NPT | 4.3 Ohm 15 V 95 A 433 V | SOT-227-4 miniBLOC |