IRLR7843TRLPBF

Infineon Technologies

IR MOSFET™ N-CHANNEL MOSFET ; DPAK TO-252 PACKAGE; 3.3 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL MOSFET ; DPAK TO-252 PACKAGE; 3.3 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRLR7843TRLPBF

Current - Continuous Drain (Id) @ 25°C	161 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC
Input Capacitance (Ciss) (Max) @ Vds	4380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs [Max]	3.3 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	FET Type	Power Dissipation (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Infineon Technologies IRLR7843TRLPBF	N-Channel	140 W	MOSFET (Metal Oxide)	-55 °C	175 ░C	4380 pF	2.3 V	TO-252AA (DPAK)	50 nC	20 V	4.5 V 10 V	3.3 mOhm	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	161 A	30 V

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General part information

N-Channel 30 V 161A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources

No documents available