IR MOSFET™ N-CHANNEL MOSFET ; DPAK TO-252 PACKAGE; 3.3 MOHM;
| Part | FET Type | Power Dissipation (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | 140 W | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4380 pF | 2.3 V | TO-252AA (DPAK) | 50 nC | 20 V | 4.5 V 10 V | 3.3 mOhm | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 161 A | 30 V |