SIGC81T60NCX7SA1

Obsolete

Infineon Technologies

IGBT 3 CHIP 600V WAFER

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IGBT 3 CHIP 600V WAFER

Technical Specifications

Parameters and characteristics for this part

Specification	SIGC81T60NCX7SA1

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	300 A
IGBT Type	NPT
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	Die
Supplier Device Package	Die
Td (on/off) @ 25°C	200 ns, 95 ns
Test Condition	100 A, 300 V, 15 V, 2.2 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Mounting Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Supplier Device Package	IGBT Type	Test Condition	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C
Infineon Technologies SIGC81T60SNCX1SA1	100 A	600 V	300 A	2.5 V	Surface Mount	450 ns	65 ns	Die	NPT	3.3 Ohm 15 V 100 A 400 V	Die	-55 °C	150 °C
Infineon Technologies SIGC81T60NCX7SA1	100 A	600 V	300 A	2.5 V	Surface Mount			Die	NPT	2.2 Ohm 15 V 100 A 300 V	Die	-55 °C	150 °C	95 ns 200 ns
Infineon Technologies SIGC81T60NCX7SA2	100 A	600 V	300 A	2.5 V	Surface Mount			Die	NPT	2.2 Ohm 15 V 100 A 300 V	Die	-55 °C	150 °C	95 ns 200 ns
Infineon Technologies SIGC81T60SNCX7SA1	100 A	600 V	300 A	2.5 V	Surface Mount	450 ns	65 ns	Die	NPT	3.3 Ohm 15 V 100 A 400 V	Die	-55 °C	150 °C
Infineon Technologies SIGC81T60NCX1SA3	100 A	600 V	300 A	2.5 V	Surface Mount			Die	NPT	2.2 Ohm 15 V 100 A 300 V	Die	-55 °C	150 °C	95 ns 200 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 600 V 100 A Surface Mount Die

Technical documentation and resources

No documents available