APT53N60BC6

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Microchip Technology

TRANS MOSFET N-CH 600V 53A 3-PIN(3+TAB) TO-247

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DocumentsAPT60N60BCSG, APT60N60SCSG MOSFET SUPERJUNCTION 600 V 60 A TO-247 Datasheet APT38N60BC6, APT38N60SC6 MOSFET SUPERJUNCTION 600 V 38 A TO-247 Datasheet +4

APT53N60BC6

Active

Microchip Technology

TRANS MOSFET N-CH 600V 53A 3-PIN(3+TAB) TO-247

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DocumentsAPT60N60BCSG, APT60N60SCSG MOSFET SUPERJUNCTION 600 V 60 A TO-247 Datasheet APT38N60BC6, APT38N60SC6 MOSFET SUPERJUNCTION 600 V 38 A TO-247 Datasheet +4

Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.35
Microchip Direct	TUBE	1	$ 8.35
		100	$ 7.21
		250	$ 6.94
		500	$ 6.78
		1000	$ 6.63
		5000	$ 6.40

Description

General part information

SUPERJUNCTION-600V Series

A family of 600V Superjunction MOSFETs available in a variety of current and package options.

Documents

Technical documentation and resources

APT60N60BCSG, APT60N60SCSG MOSFET SUPERJUNCTION 600 V 60 A TO-247 Datasheet

Data Sheets

APT38N60BC6, APT38N60SC6 MOSFET SUPERJUNCTION 600 V 38 A TO-247 Datasheet

Data Sheets

APT106N60B2C6, APT106N60LC6 MOSFET SUPERJUNCTION 600 V 106 A TO-247 MAX Datasheet

Data Sheets

Specification	APT53N60BC6	SUPERJUNCTION-600V Series

Current - Continuous Drain (Id) @ 25°C	53 A	30 - 77 A
Drain to Source Voltage (Vdss)	600 V	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	154 nC	88 - 308 nC
Gate Charge (Qg) (Max) @ Vgs	-	112 - 190 nC
Input Capacitance (Ciss) (Max) @ Vds	4020 pF	2267 - 13600 pF
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3	TO-247-3, D3PAK (2 Leads + Tab), TO-268AA, TO-268-3, TO-247-3 Variant, TO-264AA, TO-264-3
Power Dissipation (Max)	-	219 - 833 W
Power Dissipation (Max) [Max]	417 W	417 - 431 W
Rds On (Max) @ Id, Vgs	70 mOhm	41 - 125 mOhm
Rds On (Max) @ Id, Vgs	-	35 mOhm
Supplier Device Package	TO-247 [B]	TO-247 [B], D3PAK, T-MAX™ [B2], TO-264 (L)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 - 30 V
Vgs(th) (Max) @ Id	3.5 V	2.96 - 3.9 V

Part	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Technology	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]
Microchip Technology APT53N60BC6	N-Channel	600 V	Through Hole	20 V	MOSFET (Metal Oxide)	TO-247-3	TO-247 [B]	4020 pF	417 W	3.5 V	-55 °C	150 °C	70 mOhm	10 V	53 A	154 nC
Microchip Technology APT60N60SCSG/TR	N-Channel	600 V	Surface Mount	30 V	MOSFET (Metal Oxide)	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA	D3PAK	7200 pF	431 W	3.9 V	-55 °C	150 °C	45 mOhm	10 V	60 A		190 nC
Microchip Technology APT38N60BC6	N-Channel	600 V	Through Hole	20 V	MOSFET (Metal Oxide)	TO-247-3	TO-247 [B]	2826 pF		3.5 V	-55 °C	150 °C	99 mOhm	10 V	38 A		112 nC	278 W
Microchip Technology APT60N60BCSG	N-Channel	600 V	Through Hole	30 V	MOSFET (Metal Oxide)	TO-247-3	TO-247 [B]	7200 pF	431 W	3.9 V	-55 °C	150 °C	45 mOhm	10 V	60 A		190 nC
Microchip Technology APT77N60SC6	N-Channel	600 V	Surface Mount	20 V	MOSFET (Metal Oxide)	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA	D3PAK	13600 pF		2.96 mA, 3.6 V	-55 °C	150 °C	41 mOhm	10 V	77 A	260 nC		481 W
Microchip Technology APT106N60B2C6	N-Channel	600 V	Through Hole	20 V	MOSFET (Metal Oxide)	TO-247-3 Variant	T-MAX™ [B2]	8390 pF		3.5 V	-55 °C	150 °C		10 V		308 nC		833 W	35 mOhm
Microchip Technology APT47N60SC3G	N-Channel	600 V	Surface Mount	20 V	MOSFET (Metal Oxide)	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA	D3PAK	7015 pF	417 W	3.9 V	-55 °C	150 °C		10 V	47 A	260 nC
Microchip Technology APT77N60BC6	N-Channel	600 V	Through Hole	20 V	MOSFET (Metal Oxide)	TO-247-3	TO-247 [B]	13600 pF		2.96 mA, 3.6 V	-55 °C	150 °C	41 mOhm	10 V	77 A	260 nC		481 W
Microchip Technology APT60N60SCSG	N-Channel	600 V	Surface Mount	30 V	MOSFET (Metal Oxide)	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA	D3PAK	7200 pF	431 W	3.9 V	-55 °C	150 °C	45 mOhm	10 V	60 A		190 nC
Microchip Technology APT106N60LC6	N-Channel	600 V	Through Hole	20 V	MOSFET (Metal Oxide)	TO-264-3, TO-264AA	TO-264 (L)	8390 pF		3.5 V	-55 °C	150 °C		10 V		308 nC		833 W	35 mOhm

Part

FET Type

Drain to Source Voltage (Vdss)

Mounting Type

Vgs (Max)

Technology

Package / Case

Supplier Device Package

Input Capacitance (Ciss) (Max) @ Vds

Power Dissipation (Max) [Max]

Vgs(th) (Max) @ Id

Operating Temperature [Min]

Operating Temperature [Max]

Rds On (Max) @ Id, Vgs

Drive Voltage (Max Rds On, Min Rds On)

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Gate Charge (Qg) (Max) @ Vgs [Max]

Power Dissipation (Max)

Rds On (Max) @ Id, Vgs [Max]

Microchip Technology

APT53N60BC6

N-Channel

600 V

Through Hole

20 V

MOSFET (Metal Oxide)

TO-247-3

TO-247 [B]

4020 pF

417 W

3.5 V

-55 °C

150 °C

70 mOhm

10 V

53 A

154 nC

Microchip Technology

APT60N60SCSG/TR

N-Channel

600 V

Surface Mount

30 V

MOSFET (Metal Oxide)

D3PAK (2 Leads + Tab), TO-268-3, TO-268AA

D3PAK

7200 pF

431 W

3.9 V

-55 °C

150 °C

45 mOhm

10 V

60 A

190 nC

Microchip Technology

APT38N60BC6

N-Channel

600 V

Through Hole

20 V

MOSFET (Metal Oxide)

TO-247-3

TO-247 [B]

2826 pF

3.5 V

-55 °C

150 °C

99 mOhm

10 V

38 A

112 nC

278 W

Microchip Technology

APT60N60BCSG

N-Channel

600 V

Through Hole

30 V

MOSFET (Metal Oxide)

TO-247-3

TO-247 [B]

7200 pF

431 W

3.9 V

-55 °C

150 °C

45 mOhm

10 V

60 A

190 nC

Microchip Technology

APT77N60SC6

N-Channel

600 V

Surface Mount

20 V

MOSFET (Metal Oxide)

D3PAK (2 Leads + Tab), TO-268-3, TO-268AA

D3PAK

13600 pF

2.96 mA, 3.6 V

-55 °C

150 °C

41 mOhm

10 V

77 A

260 nC

481 W

Microchip Technology

APT106N60B2C6

N-Channel

600 V

Through Hole

20 V

MOSFET (Metal Oxide)

TO-247-3 Variant

T-MAX™ [B2]

8390 pF

3.5 V

-55 °C

150 °C

10 V

308 nC

833 W

35 mOhm

Microchip Technology

APT47N60SC3G

N-Channel

600 V

Surface Mount

20 V

MOSFET (Metal Oxide)

D3PAK (2 Leads + Tab), TO-268-3, TO-268AA

D3PAK

7015 pF

417 W

3.9 V

-55 °C

150 °C

10 V

47 A

260 nC

Microchip Technology

APT77N60BC6

N-Channel

600 V

Through Hole

20 V

MOSFET (Metal Oxide)

TO-247-3

TO-247 [B]

13600 pF

2.96 mA, 3.6 V

-55 °C

150 °C

41 mOhm

10 V

77 A

260 nC

481 W

Microchip Technology

APT60N60SCSG

N-Channel

600 V

Surface Mount

30 V

MOSFET (Metal Oxide)

D3PAK (2 Leads + Tab), TO-268-3, TO-268AA

D3PAK

7200 pF

431 W

3.9 V

-55 °C

150 °C

45 mOhm

10 V

60 A

190 nC

Microchip Technology

APT106N60LC6

N-Channel

600 V

Through Hole

20 V

MOSFET (Metal Oxide)

TO-264-3, TO-264AA

TO-264 (L)

8390 pF

3.5 V

-55 °C

150 °C

10 V

308 nC

833 W

35 mOhm

APT53N60BC6

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APT53N60BC6

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Pricing

Description

SUPERJUNCTION-600V Series

Documents

APT60N60BCSG, APT60N60SCSG MOSFET SUPERJUNCTION 600 V 60 A TO-247 Datasheet

APT38N60BC6, APT38N60SC6 MOSFET SUPERJUNCTION 600 V 38 A TO-247 Datasheet

APT106N60B2C6, APT106N60LC6 MOSFET SUPERJUNCTION 600 V 106 A TO-247 MAX Datasheet

APT47N60BC3G, APT47N60SC3G MOSFET SUPERJUNCTION 600 V 47 A TO-247 Datasheet

APT30N60BC6, APT30N60SC6 MOSFET SUPERJUNCTION 600 V 30 A TO-247 Datasheet

APT53N60BC6, APT53N60SC6 MOSFET SUPERJUNCTION 600 V 53 A TO-247 Datasheet

Technical Specifications

SUPERJUNCTION-600V Series