APT60N60BCSG

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Microchip Technology

MOSFET N-CH 600V 60A TO247

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Microchip Technology

MOSFET N-CH 600V 60A TO247

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General part information

A family of 600V Superjunction MOSFETs available in a variety of current and package options.

Technical documentation and resources

Specification	APT60N60BCSG	APT60N60 Series

Current - Continuous Drain (Id) @ 25°C	60 A	60 A
Drain to Source Voltage (Vdss)	600 V	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC	190 nC
Input Capacitance (Ciss) (Max) @ Vds	7200 pF	7200 pF
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3	TO-247-3, D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	431 W	431 W
Rds On (Max) @ Id, Vgs	45 mOhm	45 mOhm
Supplier Device Package	TO-247 [B]	TO-247 [B], D3PAK
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	30 V	30 V
Vgs(th) (Max) @ Id	3.9 V	3.9 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Power Dissipation (Max) [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Package / Case	Rds On (Max) @ Id, Vgs
Microchip Technology APT60N60BCSG	10 V	3.9 V	TO-247 [B]	30 V	431 W	Through Hole	190 nC	-55 °C	150 °C	N-Channel	7200 pF	60 A	600 V	MOSFET (Metal Oxide)	TO-247-3	45 mOhm
Microchip Technology APT60N60SCSG	10 V	3.9 V	D3PAK	30 V	431 W	Surface Mount	190 nC	-55 °C	150 °C	N-Channel	7200 pF	60 A	600 V	MOSFET (Metal Oxide)	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA	45 mOhm
Microchip Technology APT60N60SCSG/TR	10 V	3.9 V	D3PAK	30 V	431 W	Surface Mount	190 nC	-55 °C	150 °C	N-Channel	7200 pF	60 A	600 V	MOSFET (Metal Oxide)	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA	45 mOhm