STGWA40H65FB
ActiveTRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT
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STGWA40H65FB
ActiveTRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGWA40H65FB |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Gate Charge | 210 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 283 W |
| Supplier Device Package | TO-247 Long Leads |
| Switching Energy | 498 µJ, 363 µJ |
| Td (on/off) @ 25°C | 142 ns |
| Td (on/off) @ 25°C | 40 ns |
| Test Condition | 15 V, 5 Ohm, 400 V, 40 A |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
STGWA40H120DF2 Series
Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 long leads package
| Part | Switching Energy | Reverse Recovery Time (trr) | Gate Charge | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Collector Emitter Breakdown (Max) | Supplier Device Package | Td (on/off) @ 25°C | Td (on/off) @ 25°C | Current - Collector (Ic) (Max) [Max] | IGBT Type | Package / Case | Test Condition | Vce(on) (Max) @ Vge, Ic | Mounting Type | Power - Max [Max] | Td (on/off) @ 25°C | Current - Collector Pulsed (Icm) | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 363 µJ 498 µJ | 62 ns | 210 nC | -55 °C | 175 ░C | 650 V | TO-247 Long Leads | 142 ns | 40 ns | 80 A | Trench Field Stop | TO-247-3 | 5 Ohm 15 V 40 A 400 V | 2 V | Through Hole | 283 W | |||
STMicroelectronics | 363 µJ 498 µJ | 210 nC | -55 °C | 175 ░C | 650 V | TO-247 Long Leads | 142 ns | 40 ns | 80 A | Trench Field Stop | TO-247-3 | 5 Ohm 15 V 40 A 400 V | 2 V | Through Hole | 283 W | ||||
STMicroelectronics | 190 µJ | 114 nC | -55 °C | 175 ░C | 650 V | TO-247 Long Leads | 80 A | Trench Field Stop | TO-247-3 | 15 V 22 Ohm 40 A 400 V | 2 V | Through Hole | 238 W | -/210ns | 120 A | ||||
STMicroelectronics | 1.43 mJ 3.83 mJ | 355 ns | 129 nC | -55 °C | 175 ░C | TO-247-3 | 35 ns 148 ns | 80 A | Trench Field Stop | TO-247-3 | 15 V 15 Ohm 40 A 600 V | 2.15 V | Through Hole | 468 W | 1200 V | ||||
STMicroelectronics | 1 mJ 1.32 mJ | 488 ns | 158 nC | -55 °C | 175 ░C | TO-247-3 | 18 ns 152 ns | 80 A | Trench Field Stop | TO-247-3 | 10 Ohm 15 V 40 A 600 V | 2.6 V | Through Hole | 468 W | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGWA40H120DF2 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources