STGWA40H120DF2 Series

Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 long leads package

Catalog

Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 long leads package

Part	Switching Energy	Reverse Recovery Time (trr)	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	IGBT Type	Package / Case	Test Condition	Vce(on) (Max) @ Vge, Ic	Mounting Type	Power - Max [Max]	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics STGWA40H65DFB	363 µJ 498 µJ	62 ns	210 nC	-55 °C	175 ░C	650 V	TO-247 Long Leads	142 ns	40 ns	80 A	Trench Field Stop	TO-247-3	5 Ohm 15 V 40 A 400 V	2 V	Through Hole	283 W
STMicroelectronics STGWA40H65FB	363 µJ 498 µJ		210 nC	-55 °C	175 ░C	650 V	TO-247 Long Leads	142 ns	40 ns	80 A	Trench Field Stop	TO-247-3	5 Ohm 15 V 40 A 400 V	2 V	Through Hole	283 W
STMicroelectronics STGWA40IH65DF	190 µJ		114 nC	-55 °C	175 ░C	650 V	TO-247 Long Leads			80 A	Trench Field Stop	TO-247-3	15 V 22 Ohm 40 A 400 V	2 V	Through Hole	238 W	-/210ns	120 A
STMicroelectronics STGWA40S120DF3	1.43 mJ 3.83 mJ	355 ns	129 nC	-55 °C	175 ░C		TO-247-3		35 ns 148 ns	80 A	Trench Field Stop	TO-247-3	15 V 15 Ohm 40 A 600 V	2.15 V	Through Hole	468 W			1200 V
STMicroelectronics STGWA40H120DF2	1 mJ 1.32 mJ	488 ns	158 nC	-55 °C	175 ░C		TO-247-3		18 ns 152 ns	80 A	Trench Field Stop	TO-247-3	10 Ohm 15 V 40 A 600 V	2.6 V	Through Hole	468 W			1200 V

Catalog

Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 long leads package

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.