BSZ0702LSATMA1
ObsoleteOPTIMOS™ PD N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 4 MOHM;
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BSZ0702LSATMA1
ObsoleteOPTIMOS™ PD N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 4 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ0702LSATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 40 A, 17 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 69 W, 2.1 W |
| Rds On (Max) @ Id, Vgs | 4 mOhm |
| Supplier Device Package | PG-TDSON-8 FL |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
BSZ0702 Series
OptiMOS™ PD power MOSFETis Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages. Click here to viewfull portfolio.
Documents
Technical documentation and resources