Beta
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OPTIMOS™ PD N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 4 MOHM;
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Technology | FET Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.1 W 69 W | 4 mOhm | 22 nC | Surface Mount | 4.5 V 10 V | 2.3 V | 60 V | 17 A 40 A | 8-PowerTDFN | -55 °C | 150 °C | MOSFET (Metal Oxide) | N-Channel | 20 V | 3100 pF | PG-TDSON-8 FL |