IRF5305PBF
ActivePOWER MOSFET, HEXFET®, P CHANNEL, 55 V, 31 A, 0.06 OHM, TO-220AB, THROUGH HOLE
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IRF5305PBF
ActivePOWER MOSFET, HEXFET®, P CHANNEL, 55 V, 31 A, 0.06 OHM, TO-220AB, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRF5305PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 31 A |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 63 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 110 W |
| Rds On (Max) @ Id, Vgs | 60 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.38 | |
| 50 | $ 1.11 | |||
| 100 | $ 0.88 | |||
| 500 | $ 0.74 | |||
| 1000 | $ 0.61 | |||
| 2000 | $ 0.57 | |||
| 5000 | $ 0.54 | |||
| 10000 | $ 0.52 | |||
Description
General part information
IRF5305 Series
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Documents
Technical documentation and resources