IRF5305 Series

Catalog

POWER MOSFET, HEXFET®, P CHANNEL, 55 V, 31 A, 0.06 OHM, TO-220AB, THROUGH HOLE

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case
Infineon Technologies IRF5305PBF	4 V	31 A	MOSFET (Metal Oxide)	P-Channel	63 nC	20 V	60 mOhm	10 V	1200 pF	TO-220AB	110 W	-55 °C	175 ░C	Through Hole	55 V	TO-220-3
Infineon Technologies IRF5305STRLPBF	4 V	31 A	MOSFET (Metal Oxide)	P-Channel	63 nC	20 V	60 mOhm	10 V	1200 pF	D2PAK		-55 °C	175 ░C	Surface Mount	55 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Infineon Technologies IRF5305STRR	4 V	31 A	MOSFET (Metal Oxide)	P-Channel	63 nC	20 V	60 mOhm	10 V	1200 pF	D2PAK		-55 °C	175 ░C	Surface Mount	55 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB