SSM3J36FS,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 330MA SSM

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 330MA SSM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J36FS,LF

Current - Continuous Drain (Id) @ 25°C	330 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	43 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-75, SOT-416
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	1.31 Ohm
Supplier Device Package	SSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Package / Case	Operating Temperature	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM3J36FS,LF	SSM	1 V	330 mA	8 V	1.5 V 4.5 V	43 pF	MOSFET (Metal Oxide)	1.2 nC	150 mW	SC-75 SOT-416	150 °C	Surface Mount	P-Channel	1.31 Ohm	20 V
Toshiba Semiconductor and Storage SSM3J36TU,LF	UFM	1 V	330 mA	8 V	1.5 V 4.5 V	43 pF	MOSFET (Metal Oxide)	1.2 nC			150 °C	Surface Mount	P-Channel	1.31 Ohm	20 V

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General part information

P-Channel 20 V 330mA (Ta) 150mW (Ta) Surface Mount SSM

Technical documentation and resources