MOSFET P-CH 20V 330MA SSM
| Part | Supplier Device Package | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | Package / Case | Operating Temperature | Mounting Type | FET Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | SSM | 1 V | 330 mA | 8 V | 1.5 V 4.5 V | 43 pF | MOSFET (Metal Oxide) | 1.2 nC | 150 mW | SC-75 SOT-416 | 150 °C | Surface Mount | P-Channel | 1.31 Ohm | 20 V |
Toshiba Semiconductor and Storage | UFM | 1 V | 330 mA | 8 V | 1.5 V 4.5 V | 43 pF | MOSFET (Metal Oxide) | 1.2 nC | 150 °C | Surface Mount | P-Channel | 1.31 Ohm | 20 V |