CSD16342Q5A

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Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 5.5 MOHM

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Active

Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 5.5 MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	CSD16342Q5A

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V, -8 V
Vgs(th) (Max) @ Id	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.5 mOhm

Part	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Technology	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Texas Instruments CSD16342Q5A	8-VSONP (5x6)	1.1 V	N-Channel	Surface Mount	100 A	2.5 V, 8 V	7.1 nC	-8 V, 10 V	4.7 mOhm	25 V	150 °C	-55 °C	8-PowerTDFN	MOSFET (Metal Oxide)	3 W	1350 pF

General part information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.

Technical documentation and resources