CSD16342Q5A Series
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.5 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.5 mOhm
| Part | Supplier Device Package | Vgs(th) (Max) @ Id | FET Type | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Technology | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD16342Q5A | 8-VSONP (5x6) | 1.1 V | N-Channel | Surface Mount | 100 A | 2.5 V, 8 V | 7.1 nC | -8 V, 10 V | 4.7 mOhm | 25 V | 150 °C | -55 °C | 8-PowerTDFN | MOSFET (Metal Oxide) | 3 W | 1350 pF |
Key Features
• Optimized for 5V gate driveResistance rated at VGS = 2.5VUltra low Qg and QgdLow thermal resistanceAvalanche ratedPb free terminal platingRoHS compliantHalogen freeSON 5mm x 6mm plastic packageOptimized for 5V gate driveResistance rated at VGS = 2.5VUltra low Qg and QgdLow thermal resistanceAvalanche ratedPb free terminal platingRoHS compliantHalogen freeSON 5mm x 6mm plastic package
Description
AI
The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.
The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.