Specification	CSD16342Q5A

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	8 V
FET Type	N-Channel
Gate Charge (Max)	7.1 nC
Input Capacitance (Ciss) (Max)	1350 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	5 mm
Package Name	8-VSONP
Package Width	6 mm
Power Dissipation (Max)	3 W
Rds On (Max)	4.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	10 V
Vgs(th) (Max)	1.1 V

CSD16342 Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.5 mOhm

Part	Vgs (Max) Negative	Vgs (Max) Positive	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Package Name	Package Width	Package Length	Rds On (Max)	Package / Case	Vgs(th) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Technology	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)
Texas Instruments CSD16342Q5AT	-8 V	10 V	-55 °C	150 °C	Surface Mount	8-VSON	6 mm	5 mm	4.7 mOhm	8-PowerTDFN	1.1 V	3 W	21 A	100 A	MOSFET (Metal Oxide)	2.5 V	8 V	N-Channel	25 V	7.1 nC	1350 pF
Texas Instruments CSD16342Q5A	-8 V	10 V	-55 °C	150 °C	Surface Mount	8-VSONP	6 mm	5 mm	4.7 mOhm	8-PowerTDFN	1.1 V	3 W		100 A	MOSFET (Metal Oxide)	2.5 V	8 V	N-Channel	25 V	7.1 nC	1350 pF