IDH03G65C5XKSA1

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Infineon Technologies

DIODE SIL CARB 650V 3A TO220-2-2

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Infineon Technologies

DIODE SIL CARB 650V 3A TO220-2-2

Technical Specifications

Parameters and characteristics for this part

Specification	IDH03G65C5XKSA1

Capacitance @ Vr, F	100 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Mounting Type	Technology
Infineon Technologies IDH03G65C5XKSA1	0 ns	1.7 V	3 A	100 pF	175 ░C	-55 C	PG-TO220-2-2	50 µA	650 V	TO-220-2	No Recovery Time	Through Hole	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 3A Through Hole PG-TO220-2-2

Technical documentation and resources

No documents available