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DIODE SIL CARB 650V 3A TO220-2-2
| Part | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Capacitance @ Vr, F | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Speed | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 0 ns | 1.7 V | 3 A | 100 pF | 175 ░C | -55 C | PG-TO220-2-2 | 50 µA | 650 V | TO-220-2 | No Recovery Time | Through Hole | SiC (Silicon Carbide) Schottky |