DMTH4M90SPSW-13
ActiveDiodes Inc
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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DMTH4M90SPSW-13
ActiveDiodes Inc
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH4M90SPSW-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 278 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 9434 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Rds On (Max) @ Id, Vgs [Max] | 0.9 mOhm |
| Supplier Device Package | PowerDI5060-8 (Type UX) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 1.10 | |
| 5000 | $ 1.06 | |||
Description
General part information
DMTH4M90SPSW Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources